SIMULATION OF POWER TRANSISTOR IN ITS CIRCUIT ENVIRONMENT.

The Gummel-Poon charge controlled bipolar junction transistor model and the diode model are applied to power electronic device simulations. Methods for determination of the parameters of the charge controlled transistor model and the diode model are presented. Emphasis is on parameters which are important in power semiconductor devices. The inherent transistor and diode models in the program SPICE2 are used for the simulation. A nonlinear voltage source is added in series with the diode model to provide forward recovery modeling. The parameter determination methods are used to simulate the MEDL power transistor DT100, which is a 1000-V, 200-A device. The simulated device characteristics and the manufacturer supplied device characteristics are compared.link_to_subscribed_fulltex