The current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the presence of strong magnetic fields both parallel and perpendicular to the interfaces revealed new resonances for the latter configuration due to Landau level tunneling. However, there are remarkable similarities between the spectra for the two different magnetic field directions. This can be understood in a semiclassical context, and indicates that the broadening of the Landau levels in Si/Si 1-xGe x hole resonant tunneling diodes is severe.link_to_subscribed_fulltex
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling...
The results of experimental investigation of the vertical electron transport in a GaAs/Al0.3Ga0.7As...
We calculate the hole energy band structure in GaAs-AlAs Quantum Wells (QWs) in high in-plane magnet...
Resonant and non-resonant tunneling processes in p-type Si/Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$/Si double ...
The resonances of a resonant tunneling structure are probed by a magnetic field applied parallel to ...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunn...
We present calculations of hole Landau levels, cyclotron masses, and far-infrared spectra for strain...
We report studies of sequential resonant tunneling in GaAs/AlGaAs multi-quantum well p-i-n structure...
[[abstract]]© 1998 American Physical Society - We perform a k·p calculation including both strain an...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tun...
A description is given of resonant tunnelling processes in double-barrier semiconductor heterostruct...
We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, inv...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Proceedings of the XXIV International School of Semiconducting Coinpounds, Jaszowiec 1995. A magneti...
A new method of investigating the quantum channel surface was used to study the germanium quantum we...
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling...
The results of experimental investigation of the vertical electron transport in a GaAs/Al0.3Ga0.7As...
We calculate the hole energy band structure in GaAs-AlAs Quantum Wells (QWs) in high in-plane magnet...
Resonant and non-resonant tunneling processes in p-type Si/Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$/Si double ...
The resonances of a resonant tunneling structure are probed by a magnetic field applied parallel to ...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunn...
We present calculations of hole Landau levels, cyclotron masses, and far-infrared spectra for strain...
We report studies of sequential resonant tunneling in GaAs/AlGaAs multi-quantum well p-i-n structure...
[[abstract]]© 1998 American Physical Society - We perform a k·p calculation including both strain an...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tun...
A description is given of resonant tunnelling processes in double-barrier semiconductor heterostruct...
We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, inv...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Proceedings of the XXIV International School of Semiconducting Coinpounds, Jaszowiec 1995. A magneti...
A new method of investigating the quantum channel surface was used to study the germanium quantum we...
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling...
The results of experimental investigation of the vertical electron transport in a GaAs/Al0.3Ga0.7As...
We calculate the hole energy band structure in GaAs-AlAs Quantum Wells (QWs) in high in-plane magnet...