A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs

In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/ near the high-κ dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high-κ dielectric and interlayer on the hole mobility are discussed. © 2007 IEEE.link_to_subscribed_fulltex