Add to ORKGThe GaAs surface has been modified to reduce the density of interface states when a Schottky barrier contact is formed, producing a barrier that correlates more strongly with the metal work function. The GaAs (100) surface was modified photochemically by the reaction of oxygen under deep ultraviolet-laser illumination prior to metal deposition. The electrical characteristics of the resulting contacts have been investigated. The results confirm the effectiveness of the results.link_to_subscribed_fulltex
Major progress is reported in understanding and bringing under control metal/GaAs contacts. The key ...
At present, research and development of heterojunctions are conducted in the directions of searching...
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their sub...
The interaction of reactive and unreactive metals with clean, oxidised and sulphur passivated GaAs(l...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
The first part of this paper is devoted to the study of the GaAs (110) surface properties, to their ...
In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interfa...
The properties of different rectifying metallizations (Al, Ti/Pt, WNx on GaAs have been investigated...
We present results on the experimental and theoretical investigations of metal contacts on chalcogen...
Herein, we report galvanic displacement of metal nanoparticles and films onto single-crystalline GaA...
A new method of depositing refractory metal silicide films was developed for both Schottky barriers ...
The fabrication of epitaxial metal-GaAs contacts via electrodeposition and the electrical properties...
[[abstract]]The authors report soft X-ray photoemission studies of metal/molecular-beam epitaxy (MBE...
grantor: University of TorontoThis study introduces a novel method for surface passivation...
The results of a study of laser-annealed Au-Ge ohmic contacts to GaAs are presented. The specific co...
Major progress is reported in understanding and bringing under control metal/GaAs contacts. The key ...
At present, research and development of heterojunctions are conducted in the directions of searching...
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their sub...
The interaction of reactive and unreactive metals with clean, oxidised and sulphur passivated GaAs(l...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
The first part of this paper is devoted to the study of the GaAs (110) surface properties, to their ...
In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interfa...
The properties of different rectifying metallizations (Al, Ti/Pt, WNx on GaAs have been investigated...
We present results on the experimental and theoretical investigations of metal contacts on chalcogen...
Herein, we report galvanic displacement of metal nanoparticles and films onto single-crystalline GaA...
A new method of depositing refractory metal silicide films was developed for both Schottky barriers ...
The fabrication of epitaxial metal-GaAs contacts via electrodeposition and the electrical properties...
[[abstract]]The authors report soft X-ray photoemission studies of metal/molecular-beam epitaxy (MBE...
grantor: University of TorontoThis study introduces a novel method for surface passivation...
The results of a study of laser-annealed Au-Ge ohmic contacts to GaAs are presented. The specific co...
Major progress is reported in understanding and bringing under control metal/GaAs contacts. The key ...
At present, research and development of heterojunctions are conducted in the directions of searching...
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their sub...