InGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistor
- Yang, ES
- Yan, BP
- Hsu, CC
- Wang, XQ
Publication date
January 2002
DOI Publisher
Institution of Engineering and Technology (IET) ISSN
0013-5194 Journal
Electronics Letters Citation count (estimate)
3Abstract
A novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs0.94Sb0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage.link_to_subscribed_fulltex
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