Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors (DHEBT's) grown by MOCVD were fabricated. A DC current gain of 430 (differential gain of 500) and an offset voltage of 25 mV were obtained. A gain up to 9 was achieved at a low collector current density of 10-3 A/cm2. By using a 600 angstroms set-back layer in the collector, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1×104 A/cm2. A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained.link_to_subscribed_fulltex
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice m...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
This paper presents a method to reduce the extrinsic base-collector capacitance for HBT using a sele...
Carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipol...
A carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is report...
From LP-MOVPE grown lattice matched GaInP/GaAs layer structures we fabricated conventional Heterojun...
A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is dem...
Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Char...
GaAs bipolar transistors of different emitter types have been fabricated from MOCVD grown lattice ma...
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet a...
We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP ...
A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap colle...
Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and high electron ...
The HBBT may be understood as an advanced variant of the well-known heterojunction bipolar transisto...
High speed selfaligned Gasub0.5Insub0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm ...
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice m...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
This paper presents a method to reduce the extrinsic base-collector capacitance for HBT using a sele...
Carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipol...
A carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is report...
From LP-MOVPE grown lattice matched GaInP/GaAs layer structures we fabricated conventional Heterojun...
A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is dem...
Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Char...
GaAs bipolar transistors of different emitter types have been fabricated from MOCVD grown lattice ma...
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet a...
We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP ...
A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap colle...
Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and high electron ...
The HBBT may be understood as an advanced variant of the well-known heterojunction bipolar transisto...
High speed selfaligned Gasub0.5Insub0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm ...
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice m...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
This paper presents a method to reduce the extrinsic base-collector capacitance for HBT using a sele...