The recent observation of the optical rectification of femtosecond electromagnetic waves provides an alternative optical technique to characterize the depletion fields at semiconductor surfaces and interfaces. The experimental setup is briefly described. The semiconductor samples were selected from a variety of III-V, II-VI, and group-IV semiconductors that have bandgaps less than the incident photon energy (2 eV). The exposed semiconductor surfaces exhibit surface states that pin or bend the energy bands near the surface or semiconductor-air interface, forming a charge-depletion region and a built-in surface electric field. Rectified fields from InP, GaAs, GaSb, InSb, CdTe, CdSe, and Ge samples were observed. Parameters that control the re...
We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs...
Surface photovoltage (SPV) transient provides a non-destructive, contact-free method for characteriz...
We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz ...
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfa...
Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provide...
This thesis reports on optical second harmonic generation (SHG) and electric field induced SHG (EFIS...
Three optical spectroscopic techniques commonly used for the measurement of the surface electric fie...
Surface and interface recombination processes, which are becoming more and more important with the a...
The dynamics of the depletion field screening induced by photoexcited carriers and THz generation ca...
The diffusion coefficient of sulphur into PbS, FeS<SUB>2 </SUB>and other sulphide semiconductors has...
The research is aimed at understanding the structural, electronic, and reactive properties of semico...
Photoellipsometry, a new contactless optical method, is presented, Related to photoreflectance, this...
We describe a model as well as experiments on the electrical properties of a photoexcited tunnel jun...
We present an optical technique for the measurement of semiconductor surface electric fields. The me...
Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge regi...
We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs...
Surface photovoltage (SPV) transient provides a non-destructive, contact-free method for characteriz...
We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz ...
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfa...
Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provide...
This thesis reports on optical second harmonic generation (SHG) and electric field induced SHG (EFIS...
Three optical spectroscopic techniques commonly used for the measurement of the surface electric fie...
Surface and interface recombination processes, which are becoming more and more important with the a...
The dynamics of the depletion field screening induced by photoexcited carriers and THz generation ca...
The diffusion coefficient of sulphur into PbS, FeS<SUB>2 </SUB>and other sulphide semiconductors has...
The research is aimed at understanding the structural, electronic, and reactive properties of semico...
Photoellipsometry, a new contactless optical method, is presented, Related to photoreflectance, this...
We describe a model as well as experiments on the electrical properties of a photoexcited tunnel jun...
We present an optical technique for the measurement of semiconductor surface electric fields. The me...
Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge regi...
We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs...
Surface photovoltage (SPV) transient provides a non-destructive, contact-free method for characteriz...
We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz ...