Metal-amorphous silicon-silicon tunnel rectifier

We report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.link_to_subscribed_fulltex