A method for the determination of electron capture cross-section at imperfection centers in gallium arsenide of electroluminescent diodes

A simple method is described for the determination of the electron capture cross-section at the imperfection centers with a dominant deep level in semiconductor electroluminescent diodes. In this method, the electron capture cross-section is determined through simultaneous measurements of the temperature dependence of the minority carrier lifetime and the external quantum efficiency of the EL diodes. When the method is applied to Zn-diffused GaAs EL diodes, the average electron capture cross-section is found to be 10 -16 cm 2 at a level either 0·1 or 0·2 eV away from the mid-gap. © 1974.link_to_subscribed_fulltex