Add to ORKGIn addition, the authors discuss the charge distribution conditions in the depleted region of a linearly graded p-n junction. The results are then used to derive the C-V relationships by solving Poisson's equation. The forward current-voltage relationship is derived. Experimental results are given and a general discussion of their implications is presented.link_to_subscribed_fulltex
Light illumination effects on semiconductor device characteristics are investigated by numerical sim...
This thesis describes a systematic study of silicon dopant incorporation on various GaAs surfaces an...
The current-voltage characteristics of p-n junction rectifiers of finite size are derived by not usi...
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending...
A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor di...
The dependences of series resistance, ideality factor, and junction voltage of light-emitting diodes...
Abstract It has been recently shown, that manufacturing a diffusion-junction rectifier in a multilay...
We have studied the light emission from lateral p-n junctions grown by MBE on patterned GaAs (100) s...
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carr...
This project has been realized at the Nano-Science-Center of Copenhagen. The scheme, analyzed in thi...
A theoretical analysis of the voltage-current relationship is carried out in a membrane consisting o...
In this paper, electroluminescence (EL) characteristic study of gallium arsenide junction is reporte...
A general method for the solution of the nonlinear Shockley-Poisson differential equation which go...
The effects of hydrogen diffusion on p-n GaAs junctions have been studied by electron beam induced c...
Abstract- The effects of hydrogen diffusion on p-n GaAs junctions have been studied by electron beam...
Light illumination effects on semiconductor device characteristics are investigated by numerical sim...
This thesis describes a systematic study of silicon dopant incorporation on various GaAs surfaces an...
The current-voltage characteristics of p-n junction rectifiers of finite size are derived by not usi...
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending...
A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor di...
The dependences of series resistance, ideality factor, and junction voltage of light-emitting diodes...
Abstract It has been recently shown, that manufacturing a diffusion-junction rectifier in a multilay...
We have studied the light emission from lateral p-n junctions grown by MBE on patterned GaAs (100) s...
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carr...
This project has been realized at the Nano-Science-Center of Copenhagen. The scheme, analyzed in thi...
A theoretical analysis of the voltage-current relationship is carried out in a membrane consisting o...
In this paper, electroluminescence (EL) characteristic study of gallium arsenide junction is reporte...
A general method for the solution of the nonlinear Shockley-Poisson differential equation which go...
The effects of hydrogen diffusion on p-n GaAs junctions have been studied by electron beam induced c...
Abstract- The effects of hydrogen diffusion on p-n GaAs junctions have been studied by electron beam...
Light illumination effects on semiconductor device characteristics are investigated by numerical sim...
This thesis describes a systematic study of silicon dopant incorporation on various GaAs surfaces an...
The current-voltage characteristics of p-n junction rectifiers of finite size are derived by not usi...