The resonances of a resonant tunneling structure are probed by a magnetic field applied parallel to the interfaces, which enables us to investigate the local band structure in k space. By rotating the magnetic field in the plane of the interfaces, the energy surface at constant k is investigated. Using this technique we have studied differently strained Si/Si1-xGex quantum wells; we see a large anisotropy of the energy levels, with the symmetry axes of light holes and heavy holes being rotated 45°with respect to each other. © 1991 The American Physical Society.link_to_subscribed_fulltex
We calculate the hole energy-level structure in quantum wells (QW's) in high in-plane magnetic field...
We present de Haas-van Alphen (dHvA) measurements on high-mobility two-dimensional electron systems ...
The results of experimental studies of the Shubnikov-de Haas (SdH) effect in the (013)-HgTe/Hg1-xCdx...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunn...
The current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the prese...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tun...
The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole imp...
We calculate the hole energy band structure in GaAs-AlAs Quantum Wells (QWs) in high in-plane magnet...
Resonant magneto-tunnelling in GaAs/AlGaAs double-barrier heterostructures is studied at low tempera...
The magnetooptical anisotropy in strained quantum well structures is studied theoretically. As the s...
The influence of quantum confinement and built-in strain on conduction-electron g factors in lattice...
The principal topic of my research is the properties of quantum systems. This field has become quite...
Contains fulltext : 145232.pdf (publisher's version ) (Open Access
We present calculations of hole Landau levels, cyclotron masses, and far-infrared spectra for strain...
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
We calculate the hole energy-level structure in quantum wells (QW's) in high in-plane magnetic field...
We present de Haas-van Alphen (dHvA) measurements on high-mobility two-dimensional electron systems ...
The results of experimental studies of the Shubnikov-de Haas (SdH) effect in the (013)-HgTe/Hg1-xCdx...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunn...
The current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the prese...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tun...
The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole imp...
We calculate the hole energy band structure in GaAs-AlAs Quantum Wells (QWs) in high in-plane magnet...
Resonant magneto-tunnelling in GaAs/AlGaAs double-barrier heterostructures is studied at low tempera...
The magnetooptical anisotropy in strained quantum well structures is studied theoretically. As the s...
The influence of quantum confinement and built-in strain on conduction-electron g factors in lattice...
The principal topic of my research is the properties of quantum systems. This field has become quite...
Contains fulltext : 145232.pdf (publisher's version ) (Open Access
We present calculations of hole Landau levels, cyclotron masses, and far-infrared spectra for strain...
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
We calculate the hole energy-level structure in quantum wells (QW's) in high in-plane magnetic field...
We present de Haas-van Alphen (dHvA) measurements on high-mobility two-dimensional electron systems ...
The results of experimental studies of the Shubnikov-de Haas (SdH) effect in the (013)-HgTe/Hg1-xCdx...