An interesting phonon mode at around 685-705 cm -1 was clearly observed in the Raman spectra of InGaN/GaN multiple-quantum-wells nanopillars with different diameters at room temperature. The Raman peak position of this mode is found to show a distinct dependence on the nanopillar size, which is in well agreement with theoretical calculation of the surface optical (SO) phonon modes of nanopillars. Moreover, this kind of SO phonon was evidenced to be located on the pillar surface by using scanning confocal micro-Raman microscopy. © 2011 American Institute of Physics.published_or_final_versio
The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale...
InGaN/GaN multiquantum well, grown by MOCVD on a sapphire substrate and annealed under the condition...
In this thesis, the carrier localization effect, the quantum confinement Stark effect (QCSE) and non...
An interesting phonon mode at around 685-705 cm(-1) was clearly observed in the Raman spectra of InG...
High crystal quality GaN nanopillar arrays containing InGaN/GaN multi-quantum wells (MQWs) have been...
We investigate the optical phonons in crystalline GaN nanowires using Raman spectroscopy. Reduced ph...
Raman scattering studies were performed in GaN nanoribbons grown along [1 0 0]. These samples were p...
Temperature and excitation-power dependent photoluminescence (PL) have been carried out on InGaN/GaN...
Surface-patterning technologies have enabled the improvement of currently existing light-emitting di...
In this Letter, high-resolution confocal Raman mapping of stress distribution in etched and re-grown...
The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale...
Symposium D - Phonons and fluctuations in low dimensional structures - Poster Session I: Sebastian V...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
cited By 17International audienceGaN columnar nanostructures usually called nanowires have been inve...
The scattering in the light emission wavelength of semiconductor nano emitters assigned to nanoscale...
The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale...
InGaN/GaN multiquantum well, grown by MOCVD on a sapphire substrate and annealed under the condition...
In this thesis, the carrier localization effect, the quantum confinement Stark effect (QCSE) and non...
An interesting phonon mode at around 685-705 cm(-1) was clearly observed in the Raman spectra of InG...
High crystal quality GaN nanopillar arrays containing InGaN/GaN multi-quantum wells (MQWs) have been...
We investigate the optical phonons in crystalline GaN nanowires using Raman spectroscopy. Reduced ph...
Raman scattering studies were performed in GaN nanoribbons grown along [1 0 0]. These samples were p...
Temperature and excitation-power dependent photoluminescence (PL) have been carried out on InGaN/GaN...
Surface-patterning technologies have enabled the improvement of currently existing light-emitting di...
In this Letter, high-resolution confocal Raman mapping of stress distribution in etched and re-grown...
The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale...
Symposium D - Phonons and fluctuations in low dimensional structures - Poster Session I: Sebastian V...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
cited By 17International audienceGaN columnar nanostructures usually called nanowires have been inve...
The scattering in the light emission wavelength of semiconductor nano emitters assigned to nanoscale...
The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale...
InGaN/GaN multiquantum well, grown by MOCVD on a sapphire substrate and annealed under the condition...
In this thesis, the carrier localization effect, the quantum confinement Stark effect (QCSE) and non...