Add to ORKGWe investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed. © 2010 Materials Research Society.link_to_subscribed_fulltex
This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related wi...
This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related wi...
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LED...
This paper reports an analysis of InGaN/GaN LEDs degradation under dc and pulsed current conditions....
This paper reports an analysis of InGaN/GaN LEDs degradation under dc and pulsed current conditions....
We review the degradation mechanisms that limit the reliability of GaN-based light-emitting diodes (...
We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fab...
With this paper we describe recent results on the physical mechanisms responsible for the gradual de...
We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fab...
The study of the electro-optical properties of semiconductors has represented one of the major topic...
The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compre...
GaN-based optoelectronic devices are the market standard for light emission in the blue-green visibl...
This paper reports a study of the degradation mechanisms that limit the reliability of GaN-based LED...
This paper reports a study of the degradation mechanisms that limit the reliability of GaN-based LED...
The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compre...
This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related wi...
This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related wi...
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LED...
This paper reports an analysis of InGaN/GaN LEDs degradation under dc and pulsed current conditions....
This paper reports an analysis of InGaN/GaN LEDs degradation under dc and pulsed current conditions....
We review the degradation mechanisms that limit the reliability of GaN-based light-emitting diodes (...
We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fab...
With this paper we describe recent results on the physical mechanisms responsible for the gradual de...
We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fab...
The study of the electro-optical properties of semiconductors has represented one of the major topic...
The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compre...
GaN-based optoelectronic devices are the market standard for light emission in the blue-green visibl...
This paper reports a study of the degradation mechanisms that limit the reliability of GaN-based LED...
This paper reports a study of the degradation mechanisms that limit the reliability of GaN-based LED...
The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compre...
This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related wi...
This paper analyses the thermally-activated failure mechanisms of GaN LED test-structures related wi...
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LED...