Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin films

Resistive-switching behaviors of Ni-rich nickel oxide thin films during the set and reset processes have been examined. In the switching from a low-resistance state (LRS) to a high-resistance state (HRS), a preferable reset voltage is observed. In addition, resistance fluctuations can be also observed in a successful or unsuccessful reset switching. These observations suggest that both the formation and deformation of conductive filaments could be involved and compete in the reset process. On the other hand, the switching from the HRS to the LRS in the set process is easier to occur with a higher pulse voltage, showing that the voltage promotes the formation of the filaments. © 2011 The Electrochemical Society.published_or_final_versio