The continuous downsizing of modern electronic devices implies the increasing importance of quantum phenomena. As the feature sizes of transistors inch towards 10 nanometer, simulations including quantum effects and atomistic details are inevitable. Here we report a novel hybrid quantum mechanics and electromagnetics (QM/EM) method to model individual electronic components at the nanoscale. QM and EM models are solved in different regions of the system in a self-consistent manner. As a demostration, we study a carbon nanotube based electronic device embedded in a silicon block. Good agreement is obtained between simulation by QM/EM method and full QM treatment of the entire system. © the Owner Societies 2011.link_to_subscribed_fulltex
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale elect...
The continuing scaling of semiconductor devices down to the nanometer region, combined with advance...
Devices and components subject to quantum and atomistic effects, such as layered semiconductor struc...
Multiscale modeling has become a popular tool for research applying to different areas including mat...
Miniaturization of electronics is an unstoppable trend in the semiconductor industry. Moore’s Law ha...
A frequency-domain quantum mechanics and electromagnetics (QM∕EM) method is developed. Compared with...
A newly developed hybrid quantum mechanics and electromagnetics (QM/EM) method [Yam et al. Phys. Che...
In recent years, the understanding and accurate simulation of carbon nanotube-based transistors has ...
In this paper we present a new multi-scale simulation scheme for next-generation elec-tronic design ...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
A new modeling formalism to compute the time-dependent behavior of combined electromagnetic (EM) and...
Fifty years ago, when the Università Politecnica delle Marche (UnivPM) was founded, the minimum size...
ABSTRACT: Carbon nanotubes are possible building blocks in the development of new generation of elec...
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even ...
We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validi...
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale elect...
The continuing scaling of semiconductor devices down to the nanometer region, combined with advance...
Devices and components subject to quantum and atomistic effects, such as layered semiconductor struc...
Multiscale modeling has become a popular tool for research applying to different areas including mat...
Miniaturization of electronics is an unstoppable trend in the semiconductor industry. Moore’s Law ha...
A frequency-domain quantum mechanics and electromagnetics (QM∕EM) method is developed. Compared with...
A newly developed hybrid quantum mechanics and electromagnetics (QM/EM) method [Yam et al. Phys. Che...
In recent years, the understanding and accurate simulation of carbon nanotube-based transistors has ...
In this paper we present a new multi-scale simulation scheme for next-generation elec-tronic design ...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
A new modeling formalism to compute the time-dependent behavior of combined electromagnetic (EM) and...
Fifty years ago, when the Università Politecnica delle Marche (UnivPM) was founded, the minimum size...
ABSTRACT: Carbon nanotubes are possible building blocks in the development of new generation of elec...
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even ...
We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validi...
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale elect...
The continuing scaling of semiconductor devices down to the nanometer region, combined with advance...
Devices and components subject to quantum and atomistic effects, such as layered semiconductor struc...