Based on a modified Kittel's law, a theoretical approach was developed to study the relaxation-driven ferroelectric domain wall width evolution in an inhomogeneous SPM-tip electric field and its dependence on coercive bias. The proposed approach, which is in agreement with both the existing experimental observations and theories, was also employed to investigate the famous phenomenon of ferroelectric domain breakdown (FDB). It has been shown that the domain wall width, which varied slightly in the initial stage but changed drastically subsequently, can influence coercive bias through the linear increase region, unstable region, and nonlinear reducing region. It has also been illustrated that there are possibly three tunable FDB mechanisms i...
Session A3A three-dimensional (3-D) time-dependent domain reversal mechanism in ferroelectrics has b...
Ferroelectric materials contain domains of ordered electric dipoles, separated by domain walls, that...
Electrical permittivity dependence on electric external bias field was investigated in PZT thin film...
A three-dimensional domain reversal and growth mechanism in ferroelectrics has been proposed based o...
In this thesis, in situ biasing experiments on BiFeO3 thin film devices were enabled through the dev...
Polar and electromechanical properties of ferroelectric thin films including polarization domain for...
Polar and electromechanical properties of ferroelectric thin films including polarization domain for...
Size dependent domain configuration and its evolution under an external electric field are investiga...
Abstract. We study the domain structure in ferroelectric thin films with a ‘passive’ layer (material...
As part of an ongoing programme to evaluate the extent to which external morphology alters domain wa...
Switchable polar properties of ferroelectric and multiferroic nanostructures are ideal to further di...
Ferroelectric nanodomains were created in BaTiO(3) thin films by applying a voltage to a sharp condu...
In this Letter, the effect of domain pattern on 180 degrees domain switching behavior in BaTiO3 crys...
Ferroelectric materials contain domains of ordered electric dipoles, separated by domain walls, that...
The dynamics of complex topological defects in ferroelectric materials is explored using automated e...
Session A3A three-dimensional (3-D) time-dependent domain reversal mechanism in ferroelectrics has b...
Ferroelectric materials contain domains of ordered electric dipoles, separated by domain walls, that...
Electrical permittivity dependence on electric external bias field was investigated in PZT thin film...
A three-dimensional domain reversal and growth mechanism in ferroelectrics has been proposed based o...
In this thesis, in situ biasing experiments on BiFeO3 thin film devices were enabled through the dev...
Polar and electromechanical properties of ferroelectric thin films including polarization domain for...
Polar and electromechanical properties of ferroelectric thin films including polarization domain for...
Size dependent domain configuration and its evolution under an external electric field are investiga...
Abstract. We study the domain structure in ferroelectric thin films with a ‘passive’ layer (material...
As part of an ongoing programme to evaluate the extent to which external morphology alters domain wa...
Switchable polar properties of ferroelectric and multiferroic nanostructures are ideal to further di...
Ferroelectric nanodomains were created in BaTiO(3) thin films by applying a voltage to a sharp condu...
In this Letter, the effect of domain pattern on 180 degrees domain switching behavior in BaTiO3 crys...
Ferroelectric materials contain domains of ordered electric dipoles, separated by domain walls, that...
The dynamics of complex topological defects in ferroelectric materials is explored using automated e...
Session A3A three-dimensional (3-D) time-dependent domain reversal mechanism in ferroelectrics has b...
Ferroelectric materials contain domains of ordered electric dipoles, separated by domain walls, that...
Electrical permittivity dependence on electric external bias field was investigated in PZT thin film...