A study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectric

A hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature. Its hydrogen-sensing properties were studied at high temperatures from 100°C to 500°C. The sensor showed promising hydrogen-sensing properties over a wide temperature range, and could still function beyond 500°C. ©2009 IEEE.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 127-13