The light extraction efficiencies of InGaN/GaN blue light-emitting diodes (LEDs) of different geometries ranging from a triangle to a decagon have been simulated by ray-tracing. The conventional rectangular LED was found to be the most inefficient among the investigated polygons, and light extraction through the device sidewalls was the key factor. The results were experimentally verified by fabricating LEDs shaped into polygons by nanosecond-pulsed laser micromachining, which proved the simulated results. The mechanism of light extrac-tion in polygonal LEDs is discussed in detail. © 2010 American Institute of Physics.published_or_final_versio
Micro-light emitting diode (LED) arrays with diameters of 4 to 20 mum have been fabricated and were ...
Partly made at end of A. David Thesis. No permanent co-author from LCFInternational audienceLimitati...
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes ...
Geometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The...
Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricate...
Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-...
A proof-of-concept of applying laser micro-machining to fabricate high performance GaN light-emittin...
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have ...
Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15 to 90°) an...
The light extraction efficiency of GaN-based light-emitting diodes (LEDs) is theoretically analyzed ...
An InGaN light emitting diode (LED) with a cone-shaped GaN structure and a sawtooth-shaped sapphire ...
The effect of sapphire substrate's sidewall roughening on light extraction of AlGaN-based ultra...
The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring de...
Arrays of long wavelength, self-organized InGaAs quantum dot micron sized light-emitting diodes (mu-...
Current solutions for improving the light extraction efficiency of flip-chip light-emitting diodes (...
Micro-light emitting diode (LED) arrays with diameters of 4 to 20 mum have been fabricated and were ...
Partly made at end of A. David Thesis. No permanent co-author from LCFInternational audienceLimitati...
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes ...
Geometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The...
Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricate...
Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-...
A proof-of-concept of applying laser micro-machining to fabricate high performance GaN light-emittin...
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have ...
Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15 to 90°) an...
The light extraction efficiency of GaN-based light-emitting diodes (LEDs) is theoretically analyzed ...
An InGaN light emitting diode (LED) with a cone-shaped GaN structure and a sawtooth-shaped sapphire ...
The effect of sapphire substrate's sidewall roughening on light extraction of AlGaN-based ultra...
The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring de...
Arrays of long wavelength, self-organized InGaAs quantum dot micron sized light-emitting diodes (mu-...
Current solutions for improving the light extraction efficiency of flip-chip light-emitting diodes (...
Micro-light emitting diode (LED) arrays with diameters of 4 to 20 mum have been fabricated and were ...
Partly made at end of A. David Thesis. No permanent co-author from LCFInternational audienceLimitati...
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes ...