Add to ORKGA low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 μm T-gate InP HEMTs with 2×25 μm gate periphery. This compact microstrip MMIC is only 1.5 mm^2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band
A broadband ground gate amplifier was designed, fabricated and characterized. Noise parameters of th...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
with the same gate width (2 x 301") has a maximum stable gain of 11.6dB at 94GHz, as shown in ...
This paper presents some recently developed MMICs based on a 0.1-/spl mu/m gate-length InAlAs/InGaAs...
We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an f/sub T/ of 0.550 THz. The LN...
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobil...
In this paper we will present recent work on low noise amplifiers developed for very high frequencie...
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobil...
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobil...
Modern communication and radar systems show an increasing demand for robust ultra-broadband amplifie...
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and ...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar tra...
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized...
Abstract — In this paper, we describe the design, simulation, and on-wafer measurements of Submilli...
A broadband ground gate amplifier was designed, fabricated and characterized. Noise parameters of th...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
with the same gate width (2 x 301") has a maximum stable gain of 11.6dB at 94GHz, as shown in ...
This paper presents some recently developed MMICs based on a 0.1-/spl mu/m gate-length InAlAs/InGaAs...
We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an f/sub T/ of 0.550 THz. The LN...
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobil...
In this paper we will present recent work on low noise amplifiers developed for very high frequencie...
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobil...
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobil...
Modern communication and radar systems show an increasing demand for robust ultra-broadband amplifie...
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and ...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar tra...
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized...
Abstract — In this paper, we describe the design, simulation, and on-wafer measurements of Submilli...
A broadband ground gate amplifier was designed, fabricated and characterized. Noise parameters of th...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
with the same gate width (2 x 301") has a maximum stable gain of 11.6dB at 94GHz, as shown in ...