Add to ORKGWe have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes
III-V narrow band gap nanowires are considered for device applications. Nanowires are grown using th...
The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al8...
We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient milli...
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/G...
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/G...
High-resolution passive millimeter wave imaging cameras require per pixel detector circuitry that is...
Millimeter wave and submillimeter wave detection and imaging have attracted considerable interest du...
Sb-heterostructure backward diode (HBD) is one of the most promising candidates for millimitre-wave ...
Single nanowire transistors employing three separately controlled electrostatic gates were fabricate...
The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel he...
InAs/AlSb resonant tunneling heterostructures have been studied by ballistic electron emission spect...
InAs/AlSb Heterostructure Backward Tunneling Diodes (HBTDs) were grown on semi-insulating GaAs (100)...
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In thi...
III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epi...
An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecu...
III-V narrow band gap nanowires are considered for device applications. Nanowires are grown using th...
The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al8...
We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient milli...
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/G...
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/G...
High-resolution passive millimeter wave imaging cameras require per pixel detector circuitry that is...
Millimeter wave and submillimeter wave detection and imaging have attracted considerable interest du...
Sb-heterostructure backward diode (HBD) is one of the most promising candidates for millimitre-wave ...
Single nanowire transistors employing three separately controlled electrostatic gates were fabricate...
The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel he...
InAs/AlSb resonant tunneling heterostructures have been studied by ballistic electron emission spect...
InAs/AlSb Heterostructure Backward Tunneling Diodes (HBTDs) were grown on semi-insulating GaAs (100)...
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In thi...
III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epi...
An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecu...
III-V narrow band gap nanowires are considered for device applications. Nanowires are grown using th...
The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al8...
We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient milli...