Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting of weakly interacting helical chains undergoes a trivial insulator to strong topological insulator (metal) transition under shear (hydrostatic or uniaxial) strain. The transition is demonstrated by examining the strain evolution of the band structure, the topological Z_2 invariant and the concomitant band inversion. The underlying mechanism is the depopulation of the lone-pair orbitals associated with the valence band via proper strain engineering. Thus, Te becomes the prototype of a novel family of chiral-based three-dimensional topological insulators with important implications in spintronics, magneto-optics, and thermoelectrics
The thermoelectric transport properties of elemental tellurium are investigated by density functiona...
The thermoelectric transport properties of elemental tellurium are investigated by density functiona...
Two-dimensional (2D) Xenes of a single type of element can offer fascinating electronic properties, ...
Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting...
Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting...
Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting...
We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab in...
Strain engineering is a promising and fascinating approach to tailoring the electrical and optical p...
We investigate the effects of strain on the topological order of the Bi2Se3 family of topological in...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, r...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, r...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
The thermoelectric transport properties of elemental tellurium are investigated by density functiona...
The thermoelectric transport properties of elemental tellurium are investigated by density functiona...
Two-dimensional (2D) Xenes of a single type of element can offer fascinating electronic properties, ...
Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting...
Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting...
Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting...
We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab in...
Strain engineering is a promising and fascinating approach to tailoring the electrical and optical p...
We investigate the effects of strain on the topological order of the Bi2Se3 family of topological in...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, r...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, r...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 ...
The thermoelectric transport properties of elemental tellurium are investigated by density functiona...
The thermoelectric transport properties of elemental tellurium are investigated by density functiona...
Two-dimensional (2D) Xenes of a single type of element can offer fascinating electronic properties, ...