Add to ORKGA monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced one watt output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are ...
Obvious advantages of the millimeter wave technology including a large information capacity, high di...
A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced on...
Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test...
Monolithic planar arrays containing in excess of 1000 Schottky diodes have produced watt level outpu...
This paper reports on the recent development of monolithic frequency tripler array employing a back-...
Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-...
The authors have proposed that the increasing demand for contact watt-level coherent sources in the ...
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-st...
GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for t...
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave h...
A 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16-dB directivi...
We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar struct...
This paper reports the fabrication and millimeter-wave performance of a new class of monolithic meta...
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are ...
Obvious advantages of the millimeter wave technology including a large information capacity, high di...
A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced on...
Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test...
Monolithic planar arrays containing in excess of 1000 Schottky diodes have produced watt level outpu...
This paper reports on the recent development of monolithic frequency tripler array employing a back-...
Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-...
The authors have proposed that the increasing demand for contact watt-level coherent sources in the ...
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-st...
GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for t...
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave h...
A 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16-dB directivi...
We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar struct...
This paper reports the fabrication and millimeter-wave performance of a new class of monolithic meta...
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are ...
Obvious advantages of the millimeter wave technology including a large information capacity, high di...