Add to ORKGA DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
The current status of Heterojunction Bipolar and High-Electron Mobility Transistor technology is rev...
Monolithic, cascadable, laser-logic-device arrays have been realized and characterized. The monolith...
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first t...
Semiconductor laser technology has evolved tremendously during the last decade and there have been r...
A double-heterostructure InGaAsP/InP bipolar transistor is described which comprises a CdO film as a...
grantor: University of TorontoA novel integration technique, one which utilizes a common e...
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (inj...
Presents technologies and devices suited for monolithic integration of InP based optoelectronics and...
Based on the invention and operation of the transistor, the alloy diode laser, the quantum-well diod...
A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransis...
Development of high performance light sources and integrated transmitters suitable for wavelength-di...
An integrated laser driver circuit representing a step towards a monolithic optical transmitter was ...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
High-gain invertible double-heterostructure bipolar transistors (DHBT) aimed at laser driver applica...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
The current status of Heterojunction Bipolar and High-Electron Mobility Transistor technology is rev...
Monolithic, cascadable, laser-logic-device arrays have been realized and characterized. The monolith...
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first t...
Semiconductor laser technology has evolved tremendously during the last decade and there have been r...
A double-heterostructure InGaAsP/InP bipolar transistor is described which comprises a CdO film as a...
grantor: University of TorontoA novel integration technique, one which utilizes a common e...
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (inj...
Presents technologies and devices suited for monolithic integration of InP based optoelectronics and...
Based on the invention and operation of the transistor, the alloy diode laser, the quantum-well diod...
A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransis...
Development of high performance light sources and integrated transmitters suitable for wavelength-di...
An integrated laser driver circuit representing a step towards a monolithic optical transmitter was ...
The theoretical predictions for the performance of Heterojunction Bipolar Transistors (HBTs) have be...
High-gain invertible double-heterostructure bipolar transistors (DHBT) aimed at laser driver applica...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
The current status of Heterojunction Bipolar and High-Electron Mobility Transistor technology is rev...
Monolithic, cascadable, laser-logic-device arrays have been realized and characterized. The monolith...