As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults in DRAM subsystem are becoming more severe. Current servers mostly use CHIPKILL based schemes to tolerate up-to one/two symbol errors per DRAM beat. Such schemes may not detect multi-symbol errors arising due to faults in multiple data buses and/or chips. In this work, we introduce Single Symbol Correction Multiple Symbol Detection (SSCMSD) - a novel error handling scheme to correct single-symbol errors and detect multi-symbol errors. Our scheme makes use of a hash in combination with Error Correcting Code (ECC) to avoid silent data corruptions (SDCs). SSCMSD also enhances the capability of detecting errors in address bits. We develop a nove...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
DRAM scaling has been the prime driver for increasing the capac-ity of main memory system over the p...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
To avoid data corruption, error correction codes (ECCs) are widely used to protect memories. ECCs in...
Continued scaling of DRAM technologies induces more faulty DRAM cells than before. These inherent fa...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
With scaling down of device and increasing memory density, reliability of SRAM faces severe challeng...
The primary challenge is the fact that individual’s codes should minimize the delay and area penalty...
Die-stacked DRAM can provide large amounts of in-package, high-bandwidth cache storage. For server a...
Abstract-An efficient strategy to utilize a parallel signature analyzer (PSA) for concurrent soft-er...
Multiple cell upsets (MCUs) become more and more problematic as the size of technology reaches or go...
Servers and HPC systems often use a strong memory error correction code, or ECC, to meet their relia...
Most server-grade memory systems provide Chipkill-Correct error protection at the expense of power a...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
DRAM scaling has been the prime driver for increasing the capac-ity of main memory system over the p...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
To avoid data corruption, error correction codes (ECCs) are widely used to protect memories. ECCs in...
Continued scaling of DRAM technologies induces more faulty DRAM cells than before. These inherent fa...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
With scaling down of device and increasing memory density, reliability of SRAM faces severe challeng...
The primary challenge is the fact that individual’s codes should minimize the delay and area penalty...
Die-stacked DRAM can provide large amounts of in-package, high-bandwidth cache storage. For server a...
Abstract-An efficient strategy to utilize a parallel signature analyzer (PSA) for concurrent soft-er...
Multiple cell upsets (MCUs) become more and more problematic as the size of technology reaches or go...
Servers and HPC systems often use a strong memory error correction code, or ECC, to meet their relia...
Most server-grade memory systems provide Chipkill-Correct error protection at the expense of power a...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
DRAM scaling has been the prime driver for increasing the capac-ity of main memory system over the p...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...