This thesis covers PhD research on two systems with unique and interesting physics. The first system is lead (Pb) deposited on the silicon (111) surface with the 7x7 reconstruction. Pb and Si are mutually bulk insolubility resulting in this system being an ideal case for studying metal and semiconductor interactions. Initial Pb deposition causes an amorphous wetting layer to form across to surface. Continued deposition results in Pb(111) island growth. Classic literature has classified this system as the Stranski-Krastanov growth mode although the system is not near equilibrium conditions. Our research shows a growth mode distinctly different than classical expectations and begins a discussion of reclassifying diffusion and nucleation for s...
In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of grap...
<p>In this thesis, surface studies of two-dimensional materials on various substrates will be presen...
Approaching the miniaturization limit of silicon based microelectronics has presented ample research...
Wetting layer at surfaces plays a very important role in the growth of thin film and nanostructures ...
The carbon allotrope graphene is the first member of a new family of two-dimensional materials which...
Le graphène, premier cristal purement bidimensionnel à avoir été obtenu, possède des propriétés élec...
Graphene is a material with unique properties, which attract a lot of interest and offer technologic...
Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene f...
Advances in synthesis are imperative if graphene is to fulfill its scientific and technological pote...
Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene f...
Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene f...
This dissertation examines several of the current limitations and barriers to integration of graphen...
In this thesis we describe two intriguing and unexpected discoveries we made in the Pb/Si(111). A no...
This dissertation examines several of the current limitations and barriers to integration of graphen...
This thesis was developed to address the following questions for the Pb/Si(111) system: (1) Is it po...
In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of grap...
<p>In this thesis, surface studies of two-dimensional materials on various substrates will be presen...
Approaching the miniaturization limit of silicon based microelectronics has presented ample research...
Wetting layer at surfaces plays a very important role in the growth of thin film and nanostructures ...
The carbon allotrope graphene is the first member of a new family of two-dimensional materials which...
Le graphène, premier cristal purement bidimensionnel à avoir été obtenu, possède des propriétés élec...
Graphene is a material with unique properties, which attract a lot of interest and offer technologic...
Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene f...
Advances in synthesis are imperative if graphene is to fulfill its scientific and technological pote...
Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene f...
Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene f...
This dissertation examines several of the current limitations and barriers to integration of graphen...
In this thesis we describe two intriguing and unexpected discoveries we made in the Pb/Si(111). A no...
This dissertation examines several of the current limitations and barriers to integration of graphen...
This thesis was developed to address the following questions for the Pb/Si(111) system: (1) Is it po...
In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of grap...
<p>In this thesis, surface studies of two-dimensional materials on various substrates will be presen...
Approaching the miniaturization limit of silicon based microelectronics has presented ample research...