DOIAbstract
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
textThe continued scaling of Si CMOS devices has led to an increased attention to high-k gate diele...
[[abstract]]Metal-oxide-semiconductor capacitors with HfAlO high-k gate dielectric deposited by Atom...
Gate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is ...
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
University of Minnesota M.S. thesis. August 2010. Major:Electrical Engineering. Advisor: Stephen A. ...
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, fr...
The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technol...
As silicon-based transistors are reaching their performance limit, a growing need for a new semicond...
7th Symposium on SiO(2), Advanced Dielectriece and Related Devices, St Etienne, FRANCE, JUN 30-JUL 0...
"The book comprehensively covers all the current and the emerging areas of the physics and the techn...
The topic of thin films is an area of increasing importance in materials science, electrical enginee...
This book presents materials fundamentals of novel gate dielectrics that are being introduced into s...
As conventional scaling approaches its limits, novel materials are increasingly being explored for c...
The paper is composed of distinct reviews on various fabrication technologies of the CMOS family and...
TERRY, DAVID B. A holistic investigation of alternative gate stack materials for future CMOS applica...
textThe continued scaling of Si CMOS devices has led to an increased attention to high-k gate diele...
[[abstract]]Metal-oxide-semiconductor capacitors with HfAlO high-k gate dielectric deposited by Atom...
Gate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is ...
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
University of Minnesota M.S. thesis. August 2010. Major:Electrical Engineering. Advisor: Stephen A. ...
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, fr...
The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technol...
As silicon-based transistors are reaching their performance limit, a growing need for a new semicond...
7th Symposium on SiO(2), Advanced Dielectriece and Related Devices, St Etienne, FRANCE, JUN 30-JUL 0...
"The book comprehensively covers all the current and the emerging areas of the physics and the techn...
The topic of thin films is an area of increasing importance in materials science, electrical enginee...
This book presents materials fundamentals of novel gate dielectrics that are being introduced into s...
As conventional scaling approaches its limits, novel materials are increasingly being explored for c...
The paper is composed of distinct reviews on various fabrication technologies of the CMOS family and...
TERRY, DAVID B. A holistic investigation of alternative gate stack materials for future CMOS applica...
textThe continued scaling of Si CMOS devices has led to an increased attention to high-k gate diele...
[[abstract]]Metal-oxide-semiconductor capacitors with HfAlO high-k gate dielectric deposited by Atom...
Gate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is ...
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