Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques
- Lai, PT
- Xu, Z
- Ng, WT
Publication date
January 1994
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.published_or_final_versio
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