A self-consistent dynamic model is developed including the current distribution, carrier diffusion rate and spatial hole burning effects to investigate the modulation response of vertical-cavity surface-emitting lasers with diffused quantum wells structure. It is found that the overall performance including relaxation oscillation frequency and modulation bandwidth is improved.published_or_final_versio
Abstract-A quasi-three-dimensional dynamic model of index-guided vertical-cavity surface-emitting la...
Conference theme: Asia-Pacific Microelectronics 2000This is a first report to use diffused quantum w...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
The use of diffused quantum well structures to enhance single transverse mode operation in vertical ...
A quasi-three-dimensional dynamic model of index-guided vertical-cavity surface-emitting lasers is d...
74 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The comprehensive semiconducto...
74 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The comprehensive semiconducto...
We present a sophisticated large signal dynamic model of index guided VCSELs. The three dimensional ...
AbstractInter-diffusion in a 850 nm AlGaAs/GaAs top-emitting oxide-confined vertical-cavity surface-...
The use of interdiffused quantum wells to enhance single transverse mode operation in vertical cavit...
The influence of non-uniform distribution of electric field on the steady state and dynamic behavior...
Abstract- The use of difised quantum well structures to enhance single transverse mode operation in ...
Device simulations for the electrical and optical characteristics of GaAs based vertical cavity surf...
A generalized rate equation model is used to simulate the interrelated amplitude and frequency modul...
AbstractInter-diffusion in a 850 nm AlGaAs/GaAs top-emitting oxide-confined vertical-cavity surface-...
Abstract-A quasi-three-dimensional dynamic model of index-guided vertical-cavity surface-emitting la...
Conference theme: Asia-Pacific Microelectronics 2000This is a first report to use diffused quantum w...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
The use of diffused quantum well structures to enhance single transverse mode operation in vertical ...
A quasi-three-dimensional dynamic model of index-guided vertical-cavity surface-emitting lasers is d...
74 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The comprehensive semiconducto...
74 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The comprehensive semiconducto...
We present a sophisticated large signal dynamic model of index guided VCSELs. The three dimensional ...
AbstractInter-diffusion in a 850 nm AlGaAs/GaAs top-emitting oxide-confined vertical-cavity surface-...
The use of interdiffused quantum wells to enhance single transverse mode operation in vertical cavit...
The influence of non-uniform distribution of electric field on the steady state and dynamic behavior...
Abstract- The use of difised quantum well structures to enhance single transverse mode operation in ...
Device simulations for the electrical and optical characteristics of GaAs based vertical cavity surf...
A generalized rate equation model is used to simulate the interrelated amplitude and frequency modul...
AbstractInter-diffusion in a 850 nm AlGaAs/GaAs top-emitting oxide-confined vertical-cavity surface-...
Abstract-A quasi-three-dimensional dynamic model of index-guided vertical-cavity surface-emitting la...
Conference theme: Asia-Pacific Microelectronics 2000This is a first report to use diffused quantum w...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...