Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

n-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC vacancy. The silicon vacancy and the carbon vacancy were found to anneal out in the temperature range 400-650 °C. The VCVSi divacancy was found to persist at an annealing temperature of 1400 °C.published_or_final_versio