The intersubband infrared photodetector performance is theoretically analyzed for various stages of interdiffusion in AlGaAs/GaAs quantum well. The absorption strength and responsivity are enhanced for certain extents of interdiffusion and the peak detection wavelength red shifts continuously with a large tunable range from 7 to 38.4 µm. The dark current is at an acceptable value for small diffusion extent. ©1996 American Institute of Physics.published_or_final_versio
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing i...
The effect of interdiffusion on strained InGaAs/GaAs quantum-well infrared photodetectors is investi...
The linear and nonlinear (based on optical field intensity) intersubband absorptions in conduction b...
Interdiffusion effect has been investigated in highly strained InGaAs/GaAs multiple quantum well (MQ...
RTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and...
Interdiffusion effect has been investigated in highly strained InGaAs/GaAs multiple quantum well (MQ...
We have demonstrated red shifting and broadening of the wavelength response of a bound-to-continuum ...
A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing i...
We report on a theoretical study of the relationship between interdiffusion and the conduction bando...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing i...
The effect of interdiffusion on strained InGaAs/GaAs quantum-well infrared photodetectors is investi...
The linear and nonlinear (based on optical field intensity) intersubband absorptions in conduction b...
Interdiffusion effect has been investigated in highly strained InGaAs/GaAs multiple quantum well (MQ...
RTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and...
Interdiffusion effect has been investigated in highly strained InGaAs/GaAs multiple quantum well (MQ...
We have demonstrated red shifting and broadening of the wavelength response of a bound-to-continuum ...
A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing i...
We report on a theoretical study of the relationship between interdiffusion and the conduction bando...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
Although much work has been done on λ∼5-12 μm quantum well infrared photodetectors (QvWPs), the dist...
A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing i...