In the paper a combined experimental and theoretical investigation of the longitudinal optical phonon sidebands (PSBs) in the luminescence of free excitons in GaN at moderately high temperatures was reported. The spectral features, including line broadening, shift, and asymmetry of the one- and two-phonon PSBs, were revealed both experimentally and theoretically. It is found that the linewidth of the one-phonon PSB is surprisingly always larger than that of the two-phonon PSB in the interested temperature range. Moreover, the thermal broadening rates of the one- and two-phonon PSBs are considerably different. We adopted the Segall-Mahan theory [B. Segall and G. D. Mahan, Phys. Rev. 171, 935 (1968)] to compute the PSB spectra of the free exc...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons in high-quality ZnO ...
Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using pho...
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in Ga...
First-order and second-order longitudinal optical (LO) phonon-assisted luminescence lines of neutral...
The broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epila...
Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using nea...
Optical studies of nonpolar plane GaN substrates with emphasis on exciton-phonon coupling were carri...
Photoluminescence of wurztite GaN epilayer was measured in the range of 4 K to 300 K. At low tempera...
Temperature-dependent photoluminescence of a wurtzite GaN epilayer was measured in the range of 4 to...
Linewidth broadening of exciton luminescence in wurtzite and zinc-blende GaN epilayers was investiga...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons in high-quality ZnO ...
Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using pho...
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in Ga...
First-order and second-order longitudinal optical (LO) phonon-assisted luminescence lines of neutral...
The broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epila...
Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using nea...
Optical studies of nonpolar plane GaN substrates with emphasis on exciton-phonon coupling were carri...
Photoluminescence of wurztite GaN epilayer was measured in the range of 4 K to 300 K. At low tempera...
Temperature-dependent photoluminescence of a wurtzite GaN epilayer was measured in the range of 4 to...
Linewidth broadening of exciton luminescence in wurtzite and zinc-blende GaN epilayers was investiga...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Analysis of the phonon sidebands (PSB) observed in the photoluminescence (PL) spectra from a series ...
Longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons in high-quality ZnO ...
Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using pho...