ZnS thin film electroluminescence device prepared by ion plating

Thin films of ZnS: Mn prepared by RF-ion plating exhibited more bright electroluminescence than those prepared by RF-sputtering or electron beam deposition under supply of 200V AC with frequency of 5 kHz. Manganese sulfide (MnS) was better evaporation source than Mn halides or metallic Mn. The threshold voltage for luminescence is found to be lowered by using an oxide with a large induction coefficient as insulating layers which sandwich the phosphor layer. ZnS doped with TbF_3 exhibited greenish blue phosphor. The brightness of this electroluminescence device was similar level to that of ZnS: Mn