Analysis of oxygen incorporation process in multicrystalline silicon for solar cell during unidirectional solidification process

We studied the mechanism of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidifiation process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using FTIR measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated from 3 to 5 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to with that estimated by theoretical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si_3N_4 to the melt during growth process