Step coverage simulation code was newly developed. This code, which is a kind of test particle Monte Carlo method, can simulate the step coverage with non-liner surface reaction, for example Tungsten (W) thermal Chemical Vapor Deposition (CVD) using hydrogen (H_2) and hexafluoro Tungsten (WF_6). The availability of this code was examined by the comparison of the experimental obtained step coverage and simulated one through W-CVD. The simulation results well explained the WF_6 concentration dependency of step coverage of W film grown on the silicon substrate. The step coverage of film grown at 773K and in low WF_6 concentration becomes poor coverage, however the film grown in high WF_6 concentration shows good coverage. Under high WF_6 conce...
Hot wire chemical vapor deposition (HWCVD) is a powerful technology for deposition of high quality f...
Chemical vapor deposition (CVD) of (111)-oriented diamond film is modeled using a kinetic Monte Carl...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...
A model is presented to calculate the step coverage of blanket tungsten low pressure chemical vapor ...
A model is presented to calculate the step coverage of blanket tungsten low pressure chemical vapor ...
The results of Monte Carlo computer simulations of near-surface mass transport of the gas-phase spec...
In this study, computer mode l ing of the contact fill process with chemical vapor deposition, (CVD)...
In this study, computer modeling of the contact fill process with chemical vapor deposition, (CVD) o...
A kinetic study of chemical vapor deposition of tungsten silicide films was made, focusing on the re...
We present a new method for three-dimensional (3D) simulation of low- pressure chemical vapor deposi...
A simulation model is presented for nonplanar CVD over device feature scale structures. The direct s...
A Monte Carlo model has been used to study surface growth in thin film epitaxy. The model accounts f...
Simulation of chemical vapor deposition (CVD) in submicron features typical of semiconductor devices...
In this work, the thin tungsten film nucleated by an in situ SiH4-WF6 gas-phase reaction in the low ...
The feature scale model for selective chemical vapor deposition process was proposed, and the simula...
Hot wire chemical vapor deposition (HWCVD) is a powerful technology for deposition of high quality f...
Chemical vapor deposition (CVD) of (111)-oriented diamond film is modeled using a kinetic Monte Carl...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...
A model is presented to calculate the step coverage of blanket tungsten low pressure chemical vapor ...
A model is presented to calculate the step coverage of blanket tungsten low pressure chemical vapor ...
The results of Monte Carlo computer simulations of near-surface mass transport of the gas-phase spec...
In this study, computer mode l ing of the contact fill process with chemical vapor deposition, (CVD)...
In this study, computer modeling of the contact fill process with chemical vapor deposition, (CVD) o...
A kinetic study of chemical vapor deposition of tungsten silicide films was made, focusing on the re...
We present a new method for three-dimensional (3D) simulation of low- pressure chemical vapor deposi...
A simulation model is presented for nonplanar CVD over device feature scale structures. The direct s...
A Monte Carlo model has been used to study surface growth in thin film epitaxy. The model accounts f...
Simulation of chemical vapor deposition (CVD) in submicron features typical of semiconductor devices...
In this work, the thin tungsten film nucleated by an in situ SiH4-WF6 gas-phase reaction in the low ...
The feature scale model for selective chemical vapor deposition process was proposed, and the simula...
Hot wire chemical vapor deposition (HWCVD) is a powerful technology for deposition of high quality f...
Chemical vapor deposition (CVD) of (111)-oriented diamond film is modeled using a kinetic Monte Carl...
The implementation of detailed surface kinetic mechanisms describing the thin film growth dynamics i...