Single crystal of oxides, such as Al_2O_3 and LiNbO_3, are prepared by Czochralski method. Melted oxides have larger Prandtl number than the molten semiconducting materials, thus shape of the crystal varies with operating conditions. The shape and temperature distribution give influences on thermal stress, and the quality of the crystal. There was, however, no theoretical background to calculate thermal stress in the growing crystal, because of the complicatedly coupled non-linear phenomena in the CZ furnace. The finite element method is used to develop a computational code and sample computations are carried out for Al_2O_3 system. In this case, the crystal shape, and the thermal stress distribution are found to be dependent on the crystal...
The shape of the crystal-melt interface in Czochralski crystal growth may strongly influence the qua...
The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magne...
Czochralski crystal growth (CZ) is one of the most important single crystal growth techniques. A num...
Effects of the operating conditions on the crystal-melt interface shape are analytically investigate...
In this paper, the influence of various crystal heights to the crystal/melt interface shape and ther...
Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 cr...
The Czochralski (CZ) process is an art, and as such it requires the experience and luck of the opera...
For a Czochralski crystal growth of sapphire, influence of radiative heat transfer and gas convectio...
A series of two-dimensional and three-dimensional quasi-steady state numerical simulations have been...
In the process of crystal growth by Czochralski technique, lower part and core of the crystal are wa...
International audienceSingle La3Ga5.5Ta0.5O14 (LGT) crystals have been grown by using the Czochralsk...
This paper reports on the radiation heat transfer from the melt in a Czochralski crystal growing fur...
As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessar...
International audienceThe three dimensional thermal stress field was calculated for different growth...
Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant ...
The shape of the crystal-melt interface in Czochralski crystal growth may strongly influence the qua...
The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magne...
Czochralski crystal growth (CZ) is one of the most important single crystal growth techniques. A num...
Effects of the operating conditions on the crystal-melt interface shape are analytically investigate...
In this paper, the influence of various crystal heights to the crystal/melt interface shape and ther...
Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 cr...
The Czochralski (CZ) process is an art, and as such it requires the experience and luck of the opera...
For a Czochralski crystal growth of sapphire, influence of radiative heat transfer and gas convectio...
A series of two-dimensional and three-dimensional quasi-steady state numerical simulations have been...
In the process of crystal growth by Czochralski technique, lower part and core of the crystal are wa...
International audienceSingle La3Ga5.5Ta0.5O14 (LGT) crystals have been grown by using the Czochralsk...
This paper reports on the radiation heat transfer from the melt in a Czochralski crystal growing fur...
As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessar...
International audienceThe three dimensional thermal stress field was calculated for different growth...
Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant ...
The shape of the crystal-melt interface in Czochralski crystal growth may strongly influence the qua...
The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magne...
Czochralski crystal growth (CZ) is one of the most important single crystal growth techniques. A num...