Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour

Steady-state and turn-off switching characteristics of aluminium-implanted 4H-SiC p-i-n diodes designed for high current density operation, are investigated experimentally and by mean of numerical simulations in the 298-523 K temperature range. The diodes present circular structure with a diameter of 350 μm and employ an anode region with an aluminium depth profile peaking at 6?1019 cm−3 at the surface. The profile edge and the junction depth are located at 0.2 and 1.35 μm, respectively. At room temperature the measured forward current density is close to 370 A/cm2 at 5 V with an ideality factor always less than 2 before high current injection or device series resistance became dominant. The transient analysis reveals a strong potential of this diodes for use in high speed, high power applications, especially at high temperature, with a very low turn-off recovery time (