Resonating microcantilever (MCs) are extremely sensitive mass detectors that have been successfully proposed as chemical, biological and environmental sensors [1]. However, recent works have demonstrated that variation of flexural rigidity due to localization of molecule absorption can induce a positive frequency shift larger than the negative one due to the added mass effect [2]. Goal of our research is to grown and pattern thin 3C-SiC films on Si MC to obtain a huge local increment of beam stiffness, exploiting the outstanding mechanical properties of such material (in particular, its large Young modulus)
International audienceThe stress state is a crucial parameter for the design of innovative microelec...
The fn × Q (Hz) is a crucial sensitivity parameter for micro-electro-mechanical sensing. We have rec...
This paper demonstrates the ability of 3CSiC microcantilevers (μCs) to monitor binary gas mixture wi...
Abstract. Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in ord...
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to stud...
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to stud...
� 2015 AIP Publishing LLC. We introduce a simple methodology to predict and tailor the intrinsic b...
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (hig...
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (hig...
This paper deals with the fabrication process of single-crystal silicon carbide (SiC) thin-films and...
Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-elec...
This paper presents for the first time the effect of strain on the electrical conductivity of p-type...
In this work, test microstructures for SiC film mechanical property measurements by beam bending usi...
SiC is an extremely promising material for nanoelectromechanical systems given its large Young's mod...
This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cry...
International audienceThe stress state is a crucial parameter for the design of innovative microelec...
The fn × Q (Hz) is a crucial sensitivity parameter for micro-electro-mechanical sensing. We have rec...
This paper demonstrates the ability of 3CSiC microcantilevers (μCs) to monitor binary gas mixture wi...
Abstract. Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in ord...
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to stud...
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to stud...
� 2015 AIP Publishing LLC. We introduce a simple methodology to predict and tailor the intrinsic b...
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (hig...
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (hig...
This paper deals with the fabrication process of single-crystal silicon carbide (SiC) thin-films and...
Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-elec...
This paper presents for the first time the effect of strain on the electrical conductivity of p-type...
In this work, test microstructures for SiC film mechanical property measurements by beam bending usi...
SiC is an extremely promising material for nanoelectromechanical systems given its large Young's mod...
This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cry...
International audienceThe stress state is a crucial parameter for the design of innovative microelec...
The fn × Q (Hz) is a crucial sensitivity parameter for micro-electro-mechanical sensing. We have rec...
This paper demonstrates the ability of 3CSiC microcantilevers (μCs) to monitor binary gas mixture wi...