Combining RAM technologies for hard-error recovery in L1 data caches working at very-low power modes

©2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Low-power modes in modern microprocessors rely on low frequencies and low voltages to reduce the energy budget. Nevertheless, manufacturing induced parameter variations can make SRAM cells unreliable producing hard errors at supply voltages below Vccmin. Recent proposals provide a rather low fault-coverage due to the fault coverage/overhead trade-off. We propose a new faulttolerant L1 cache, which combines SRAM and eDRAM cells in L1 data caches to provide 100% SRAM hard-error fault coverage. Results show that, compared to a conventional cache and assuming 50% failure probability at low-power mode, leakage and dynamic energy savings are by 85% and 62%, respectively, with a minimal impact on performance.This work was supported by the Spanish MICINN (TIN2010-18368) with the Consolider-Ingenio 2010 Programme co-funded by the European Commission FEDER funds (CSD2006-00046) and co-funded with the Plan E funds (TIN2009-14475-C04-01). Additionaly, it was supported by Generalitat de Catalunya (2009SGR1250), by FP7 program of the European Commission (TRAMS-248789), and by Spanish MINECO (TIN2012-38341-C04-01).Lorente Garcés, VJ.; Valero Bresó, A.; Sahuquillo Borrás, J.; Petit Martí, SV.; Canal, R.; López Rodríguez, PJ.; Duato Marín, JF. (2013). Combining RAM technologies for hard-error recovery in L1 data caches working at very-low power modes. IEEE, ACM. https://doi.org/10.7873/DATE.2013.031