Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to higher storage density, but also to higher error rates. This dissertation considers this reliability problem of flash memories and investigates suitable error correction codes, e.g. BCH-codes and concatenated codes. First, the flash cells, their functionality and error characteristics are explained. Next, the mathematics of the employed algebraic code are discussed. Subsequently, generalized concatenated codes (GCC) are presented. Compared to the commonly used BCH codes, concatenated codes promise higher code rates and lower implementation complexity. This complexity reduction is achieved by dividing a long code into smaller components, whic...
Abstract—In this work, we use an extensive empirical database of errors induced by write, read, and ...
Error Correction Codes (ECC) are used in NAND Flash memories to detect and correct bit-errors. With ...
The introduction of multiple-level cell (MLC) and triple-level cell (TLC) technologies reduced the r...
Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to...
Error correction coding based on soft-input decoding can significantly improve the reliability of no...
Field error correction coding is particularly suitable for applications in non-volatile flash memori...
This work proposes a decoder implementation for high-rate generalized concatenated (GC) codes. The p...
NAND flash memory is widely used for data storage due to low power consumption, high throughput, sho...
Generalised concatenated (GC) codes are well suited for error correction in flash memories for high-...
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memorie...
In this paper, we present an efficient fault tolerant solution for multi-level per cell (MLC) flash ...
NAND Flash memories have become a widely used non-volatile data storage technology and their applica...
Generalized concatenated (GC) codes with soft-input decoding were recently proposed for error correc...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
A modern large-scale storage system usually consists of a number of distributed storage nodes, each ...
Abstract—In this work, we use an extensive empirical database of errors induced by write, read, and ...
Error Correction Codes (ECC) are used in NAND Flash memories to detect and correct bit-errors. With ...
The introduction of multiple-level cell (MLC) and triple-level cell (TLC) technologies reduced the r...
Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to...
Error correction coding based on soft-input decoding can significantly improve the reliability of no...
Field error correction coding is particularly suitable for applications in non-volatile flash memori...
This work proposes a decoder implementation for high-rate generalized concatenated (GC) codes. The p...
NAND flash memory is widely used for data storage due to low power consumption, high throughput, sho...
Generalised concatenated (GC) codes are well suited for error correction in flash memories for high-...
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memorie...
In this paper, we present an efficient fault tolerant solution for multi-level per cell (MLC) flash ...
NAND Flash memories have become a widely used non-volatile data storage technology and their applica...
Generalized concatenated (GC) codes with soft-input decoding were recently proposed for error correc...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
A modern large-scale storage system usually consists of a number of distributed storage nodes, each ...
Abstract—In this work, we use an extensive empirical database of errors induced by write, read, and ...
Error Correction Codes (ECC) are used in NAND Flash memories to detect and correct bit-errors. With ...
The introduction of multiple-level cell (MLC) and triple-level cell (TLC) technologies reduced the r...