Crystalline and amorphous GaSb surfaces are compared concerning their response to sputter erosion with low energy Ar+ ions under normal incidence. We show that the formation of regular nanostructures on GaSb is basically independent of whether the initial material is crystalline or amorphous. The similarity in the temporal and spatial evolution demonstrates that the dynamics of the morphology evolution is entirely controlled by a thin amorphous surface layer
Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes an...
A lack of universality with respect to ion species has been recently established in nanostructuring ...
We derive a stochastic nonlinear continuum equation to describe the morphological evolution of amorp...
Crystalline and amorphous GaSb surfaces are compared concerning their response to sputter erosion wi...
Surface modification of GaSb(001) induced by low energy (2 to 4.5 keV) Ar ion beam irradiation has b...
Ion-induced nanopatterning of GaSb produces hexagonally ordered nanopatterns with cone-shaped nanofe...
Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer for...
During ion sputtering of GaSb(100) surfaces a transient behavior from initial smoothing to roughenin...
This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, ...
We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formatio...
Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented...
Ion track formation, amorphization, and the formation of porosity in crystalline GaSb induced by 185...
This dissertation has investigated the early stages of both topographical and compositional evolutio...
Morphological evolution of surfaces during the course of off-normal cluster ion beam bombardment is ...
The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. ...
Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes an...
A lack of universality with respect to ion species has been recently established in nanostructuring ...
We derive a stochastic nonlinear continuum equation to describe the morphological evolution of amorp...
Crystalline and amorphous GaSb surfaces are compared concerning their response to sputter erosion wi...
Surface modification of GaSb(001) induced by low energy (2 to 4.5 keV) Ar ion beam irradiation has b...
Ion-induced nanopatterning of GaSb produces hexagonally ordered nanopatterns with cone-shaped nanofe...
Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer for...
During ion sputtering of GaSb(100) surfaces a transient behavior from initial smoothing to roughenin...
This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, ...
We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formatio...
Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented...
Ion track formation, amorphization, and the formation of porosity in crystalline GaSb induced by 185...
This dissertation has investigated the early stages of both topographical and compositional evolutio...
Morphological evolution of surfaces during the course of off-normal cluster ion beam bombardment is ...
The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. ...
Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes an...
A lack of universality with respect to ion species has been recently established in nanostructuring ...
We derive a stochastic nonlinear continuum equation to describe the morphological evolution of amorp...