Add to ORKGWe consider the noisy write-once memory (WOM) model to capture the behavior of data-storage devices such as flash memories. The noisy WOM is an asymmetric channel model with non-causal state information at the encoder. We show that a nesting of non-linear polar codes achieves the corresponding Gelfand-Pinsker bound with polynomial complexity
This dissertation addresses various problems related to data encoding and error-correction technique...
Abstract — The level of write-once memory cells (e.g., Flash) can only be raised individually. Bulk ...
This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data s...
We consider the noisy write-once memory (WOM) model to capture the behavior of data-storage devices ...
Both rewriting and error correction are important technologies for non-volatile memories, especially...
The dissertation provides polar coding techniques for a variety of source and channel models with ap...
We propose efficient coding schemes for two communication settings: 1. asymmetric channels, and 2. c...
Abstract—For nonvolatile memories such as flash memo-ries and phase-change memories, endurance and r...
Both rewriting and error correction are technologies usable for non-volatile memories, such as flash...
Motivated by the emerging interests in non-volatile solid-state computer memories such as flash memo...
The two central topics of information theory are the compression and the transmission of data. Shann...
Abstract—Write-unidirectional memories (WUMs) were introduced by Willems, Vinck, and Borden as an in...
Non-volatile memories (NVMs) have attracted considerable attention as data storage media because of ...
The increasing density of NAND flash memories makes data more prone to errors due to severe process ...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
This dissertation addresses various problems related to data encoding and error-correction technique...
Abstract — The level of write-once memory cells (e.g., Flash) can only be raised individually. Bulk ...
This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data s...
We consider the noisy write-once memory (WOM) model to capture the behavior of data-storage devices ...
Both rewriting and error correction are important technologies for non-volatile memories, especially...
The dissertation provides polar coding techniques for a variety of source and channel models with ap...
We propose efficient coding schemes for two communication settings: 1. asymmetric channels, and 2. c...
Abstract—For nonvolatile memories such as flash memo-ries and phase-change memories, endurance and r...
Both rewriting and error correction are technologies usable for non-volatile memories, such as flash...
Motivated by the emerging interests in non-volatile solid-state computer memories such as flash memo...
The two central topics of information theory are the compression and the transmission of data. Shann...
Abstract—Write-unidirectional memories (WUMs) were introduced by Willems, Vinck, and Borden as an in...
Non-volatile memories (NVMs) have attracted considerable attention as data storage media because of ...
The increasing density of NAND flash memories makes data more prone to errors due to severe process ...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
This dissertation addresses various problems related to data encoding and error-correction technique...
Abstract — The level of write-once memory cells (e.g., Flash) can only be raised individually. Bulk ...
This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data s...