Physical model for burst noise in semiconductor devices

A physical model for burst noise in p−n junction devices is presented. It is proposed that burst noise results when the current through a defect is modulated by a change in the charge state of a single recombination-generation center located adjacent to the defect. The burst noise amplitude and pulse widths are related to the basic properties of the recombination-generation center and the defect. The model leads to a simple interpretation of the equivalent circuit for diodes which exhibit this type of noise