Add to ORKGTunnel junctions have been characterized in terms of three parameters, the barrier heights φ_1, and φ_2, and the width S, which generally are determined by a fit of experimental current-voltage characteristic curves with theory. In metal-semiconductor systems barrier heights have been determined independently of other parameters from measurement of the spectral dependence of photoresponse. We wish to report the first results of the application of this technique to the measurement of the barrier heights in Al-Al_2O_3-A1 and Al-A1_20_3—Au tunnel junctions where the Al_2O_3 thickness is in the range of 20 to 40 Å
Experimental results concerning Pb-CdS-Pb light-sensitive Josephson junctions are reported. Current-...
The ability to detect and determine a typically weak internal photoemission (IPE) signal from a usua...
experimental data on the kinetics of conduction and electroluminescence in Al/Al2O3/Au and Al/CaWO4/...
Tunnel junctions have been characterized in terms of three parameters, the barrier heights φ_1, an...
The photoconductance of magnetic tunnel junctions has been studied in order to obtain directly deter...
We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of appli...
International audienceThe tunnel photocurrent between a gold surface and a free-standing semiconduct...
The photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if ...
n this work, we have compared the barrier height measurements carried out using the Powell method wi...
We have performed transport measurements on Al and Nb based metal-oxide-metal tunnel junctions with ...
Current–voltage curves measured over the temperature range 13–300 K show three shoulders and/or peak...
Abstract. Model m1-p-n-m2 structures with three barriers were considered; construction and technolog...
We have directly measured the thickness distribution of the tunnel barriers in state-of-the-art Al/A...
Graduation date: 2017Access restricted to the OSU Community, at author's request, from August 9, 201...
Experimental results concerning Pb-CdS-Pb light-sensitive Josephson junctions are reported. Current-...
The ability to detect and determine a typically weak internal photoemission (IPE) signal from a usua...
experimental data on the kinetics of conduction and electroluminescence in Al/Al2O3/Au and Al/CaWO4/...
Tunnel junctions have been characterized in terms of three parameters, the barrier heights φ_1, an...
The photoconductance of magnetic tunnel junctions has been studied in order to obtain directly deter...
We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of appli...
International audienceThe tunnel photocurrent between a gold surface and a free-standing semiconduct...
The photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if ...
n this work, we have compared the barrier height measurements carried out using the Powell method wi...
We have performed transport measurements on Al and Nb based metal-oxide-metal tunnel junctions with ...
Current–voltage curves measured over the temperature range 13–300 K show three shoulders and/or peak...
Abstract. Model m1-p-n-m2 structures with three barriers were considered; construction and technolog...
We have directly measured the thickness distribution of the tunnel barriers in state-of-the-art Al/A...
Graduation date: 2017Access restricted to the OSU Community, at author's request, from August 9, 201...
Experimental results concerning Pb-CdS-Pb light-sensitive Josephson junctions are reported. Current-...
The ability to detect and determine a typically weak internal photoemission (IPE) signal from a usua...
experimental data on the kinetics of conduction and electroluminescence in Al/Al2O3/Au and Al/CaWO4/...