The surface of a nanostructure relaxing on a substrate consists of a finite number of interacting steps and often involves the expansion of facets. Prior theoretical studies of facet evolution have focused on models with an infinite number of steps, which neglect edge effects caused by the presence of the substrate. By considering diffusion of adsorbed atoms (adatoms) on terraces and attachment-detachment of atoms at steps, we show that these edge or finite height effects play an important role in the structure's macroscopic evolution. We assume diffusion-limited kinetics for adatoms and a homoepitaxial substrate. Specifically, using data from step simulations and a continuum theory, we demonstrate a switch in the time behavior of geometric...
Radial growth of vertically aligned nanowires involves formation and propagation of monoatomic steps...
Usually, the growth of a crystal vacuum interface is described in terms of atom diffusion along the ...
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the p...
The surface of a nanostructure relaxing on a substrate consists of a finite number of interacting st...
Molecular beam epitaxy has recently been applied to the growth and self assembly of nanostructures o...
The morphological relaxation of faceted crystal surfaces is studied via a continuum approach. Our fo...
In this work, we revisit models of the diffusion-induced growth of nanowires (NWs) accompanied by th...
Surface diffusion of atoms plays a significant role in the evolution of the shape of a material in t...
Surface diffusion of atoms plays a significant role in the evolution of the shape of a material in t...
Advances in materials science have enabled the observation and control of microstructures such as na...
We study epitaxial growth onto a patterned substrate by considering the nucleation and motion of ste...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mathematics, 2006.Includes bibliogr...
In heteroepitaxy, the mismatch of lattice constants between the crystal film and the substrate cause...
Scanning tunneling microscopy is used to monitor the formation and relaxation of nanoprotrusions and...
Vicinal surfaces consist of terraces separated by atomic steps. In the step-flow regime, deposited a...
Radial growth of vertically aligned nanowires involves formation and propagation of monoatomic steps...
Usually, the growth of a crystal vacuum interface is described in terms of atom diffusion along the ...
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the p...
The surface of a nanostructure relaxing on a substrate consists of a finite number of interacting st...
Molecular beam epitaxy has recently been applied to the growth and self assembly of nanostructures o...
The morphological relaxation of faceted crystal surfaces is studied via a continuum approach. Our fo...
In this work, we revisit models of the diffusion-induced growth of nanowires (NWs) accompanied by th...
Surface diffusion of atoms plays a significant role in the evolution of the shape of a material in t...
Surface diffusion of atoms plays a significant role in the evolution of the shape of a material in t...
Advances in materials science have enabled the observation and control of microstructures such as na...
We study epitaxial growth onto a patterned substrate by considering the nucleation and motion of ste...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mathematics, 2006.Includes bibliogr...
In heteroepitaxy, the mismatch of lattice constants between the crystal film and the substrate cause...
Scanning tunneling microscopy is used to monitor the formation and relaxation of nanoprotrusions and...
Vicinal surfaces consist of terraces separated by atomic steps. In the step-flow regime, deposited a...
Radial growth of vertically aligned nanowires involves formation and propagation of monoatomic steps...
Usually, the growth of a crystal vacuum interface is described in terms of atom diffusion along the ...
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the p...