This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on the band alignment at ZnO − 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) interface and on the resistive switching (RS) behavior of pulsed laser deposited ZnO/0.5BZT-0.5BCT heterostructures. X-ray photoelectron spectroscopy (XPS) has been employed to measure the valence band offset and the conduction band offset of the ZnO/0.5BZT-0.5BCT heterojunctions. The valence and conduction band offsets of the ZnO/0.5BZT-0.5BCT heterostucture with ZnO deposited at 10−2 mbar of partial oxygen pressure were found to be 0.27 and 0.80 eV, respectively. The RS effect in heterostructures is explained on the base of the charge coupling between the s...
In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS)...
Interfacing of ferroelectric and semiconductor materials provides a means of coupling unique propert...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...
This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on...
This work reports the impact of ZnO layer thickness on optical and resistive switching behavior of B...
We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3-Zn...
Just Accepted ManuscriptIn the present work, we study the hysteretic behavior in the electric-field-...
In this work, we investigate the photovoltaic response of Pt/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3...
In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance an...
In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0....
Abstract. Six decades of research on ZnO has recently sprouted a new branch in the domain of resisti...
Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into me...
Memristors are an interesting class of resistive random access memory (RRAM) based on the electrical...
We report on capacitance-voltage, current-voltage, Sawyer–Tower, and transient current switching mea...
This work demonstrates the role of defects generated during rapid thermal annealing of pulsed laser ...
In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS)...
Interfacing of ferroelectric and semiconductor materials provides a means of coupling unique propert...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...
This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on...
This work reports the impact of ZnO layer thickness on optical and resistive switching behavior of B...
We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3-Zn...
Just Accepted ManuscriptIn the present work, we study the hysteretic behavior in the electric-field-...
In this work, we investigate the photovoltaic response of Pt/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3...
In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance an...
In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0....
Abstract. Six decades of research on ZnO has recently sprouted a new branch in the domain of resisti...
Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into me...
Memristors are an interesting class of resistive random access memory (RRAM) based on the electrical...
We report on capacitance-voltage, current-voltage, Sawyer–Tower, and transient current switching mea...
This work demonstrates the role of defects generated during rapid thermal annealing of pulsed laser ...
In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS)...
Interfacing of ferroelectric and semiconductor materials provides a means of coupling unique propert...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...