Magnetic domain walls (DWs) in perpendicularly magnetised thin films are attractive for racetrack memories, but technological progress still requires further reduction of the operationing currents. To efficiently drive these objects by the means of electric current, one has to optimize the damping-like torque which is caused by the spin Hall effect (SHE). This not only requires a high net spin Hall angle but also the presence of a Dzyaloshinskii–Moriya interaction (DMI) to produce magnetic textures sensitive to this type of the torque. In this work, we explore the coexistence and importance of these two phenomena in epitaxial Pt/Co/Pt1−xAux films in which we control the degree of inversion symmetry-breaking between the two interfaces by var...
We report the thickness dependence of the Dzyaloshinskii-Moriya interaction (DMI) and spin-orbit tor...
We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane m...
Thesis: Sc. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
Magnetic domain walls (DWs) in perpendicularly magnetised thin films are attractive for racetrack me...
Chiral domain walls in ultrathin perpendicularly magnetised layers have a N\'{e}el structure stabili...
[EN]Chiral domain walls in ultrathin perpendicularly magnetized layers have a Néel structure stabili...
The microscopic magnetization variation in magnetic domain walls in thin films is a crucial property...
Chiral domain walls in ultrathin perpendicularly magnetized layers have a Néel structure stabilized ...
Data used to determine DW velocity for Pt/Co/au and Pt/Co/PtAu epitaxial trilayer
We investigate the Dzyaloshinskii-Moriya interactions (DMIs) in perpendicularly magnetized thin film...
We use Kerr microscopy to characterize magnetic domain walls in Co/Ni based magnetic nanowires grown...
Perpendicularly magnetized materials have attracted significant interest owing to their high anisotr...
Abstract The influence of C insertion on Dzyaloshinskii–Moriya interaction (DMI) as well as current-...
\u3cp\u3eWe report the thickness dependence of the Dzyaloshinskii-Moriya interaction (DMI) and spin-...
It is now commonly accepted that materials exhibiting high perpendicular magnetic anisotropy are exc...
We report the thickness dependence of the Dzyaloshinskii-Moriya interaction (DMI) and spin-orbit tor...
We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane m...
Thesis: Sc. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
Magnetic domain walls (DWs) in perpendicularly magnetised thin films are attractive for racetrack me...
Chiral domain walls in ultrathin perpendicularly magnetised layers have a N\'{e}el structure stabili...
[EN]Chiral domain walls in ultrathin perpendicularly magnetized layers have a Néel structure stabili...
The microscopic magnetization variation in magnetic domain walls in thin films is a crucial property...
Chiral domain walls in ultrathin perpendicularly magnetized layers have a Néel structure stabilized ...
Data used to determine DW velocity for Pt/Co/au and Pt/Co/PtAu epitaxial trilayer
We investigate the Dzyaloshinskii-Moriya interactions (DMIs) in perpendicularly magnetized thin film...
We use Kerr microscopy to characterize magnetic domain walls in Co/Ni based magnetic nanowires grown...
Perpendicularly magnetized materials have attracted significant interest owing to their high anisotr...
Abstract The influence of C insertion on Dzyaloshinskii–Moriya interaction (DMI) as well as current-...
\u3cp\u3eWe report the thickness dependence of the Dzyaloshinskii-Moriya interaction (DMI) and spin-...
It is now commonly accepted that materials exhibiting high perpendicular magnetic anisotropy are exc...
We report the thickness dependence of the Dzyaloshinskii-Moriya interaction (DMI) and spin-orbit tor...
We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane m...
Thesis: Sc. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...