By calculating an exchange-correlation potential from the self-energy operator, we show that interpretation of the one-electron band structure appearing in density-functional theory (DFT) calculations as quasiparticle energies is seriously invalid. For example, the well-known error in the minimum band gap of semiconductors and insulators is not caused by the use of the local density approximation (LDA), but is inherent to DFT. Furthermore, the metal-insulator transition undergone when a semiconductor is compressed is not described correctly within DFT, showing that the DFT Fermi surface is not necessarily that of the real system. However, excited state properties can be calculated correctly, by using computational many-body theory. The GW a...
The quantal density-functional theory (Q-DFT) of nondegenerate excited-states maps the pure state of...
Quasiparticle energies and fundamental band gaps in particular are critical properties of molecules ...
Quasiparticle energies and band gaps in semiconductors determined with an efficient DFT-GW schem
By calculating an exchange-correlation potential from the self-energy operator, we show that interpr...
We show how the density-functional theory (DFT) exchange-correlation potential Vxc(r) of a semicondu...
The GW method is a standard method to calculate the electronic band structure from first principles....
The GW method is a standard method to calculate the electronic band structure from first principles....
We successfully applied the Green function theory in GW approximation to calculate the quasiparticle...
This article deals with excited-state properties and spectroscopies which probe them. We argue that ...
We explain by quantal density functional theory the physics of mapping from any bound nondegenerate ...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
The GW approximation for the self-energy connected with the one-electron Green's function has been v...
One of the fundamental problems in condensed-matter physics and quan-tum chemistry is the theoretica...
In this note I would like to give some personal views on the relevance of bandstructure treatments o...
The quantal density-functional theory (Q-DFT) of nondegenerate excited-states maps the pure state of...
Quasiparticle energies and fundamental band gaps in particular are critical properties of molecules ...
Quasiparticle energies and band gaps in semiconductors determined with an efficient DFT-GW schem
By calculating an exchange-correlation potential from the self-energy operator, we show that interpr...
We show how the density-functional theory (DFT) exchange-correlation potential Vxc(r) of a semicondu...
The GW method is a standard method to calculate the electronic band structure from first principles....
The GW method is a standard method to calculate the electronic band structure from first principles....
We successfully applied the Green function theory in GW approximation to calculate the quasiparticle...
This article deals with excited-state properties and spectroscopies which probe them. We argue that ...
We explain by quantal density functional theory the physics of mapping from any bound nondegenerate ...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
We present a quantitative parameter-free method for calculating defect states and charge-transition ...
The GW approximation for the self-energy connected with the one-electron Green's function has been v...
One of the fundamental problems in condensed-matter physics and quan-tum chemistry is the theoretica...
In this note I would like to give some personal views on the relevance of bandstructure treatments o...
The quantal density-functional theory (Q-DFT) of nondegenerate excited-states maps the pure state of...
Quasiparticle energies and fundamental band gaps in particular are critical properties of molecules ...
Quasiparticle energies and band gaps in semiconductors determined with an efficient DFT-GW schem