Press Pack Insulated Gate Bipolar Transistors (PP- IGBTs) are commonly connected in series and stacked together with heatsinks using an exterior clamping fixture in order to achieve high voltage dc-link levels. A suitable contact area between the clamping fixture and the device is essential to ensuring optimal PP IGBT thermo-mechanical performance, especially for the first and last devices in a stack. In this study, the effects of the clamping area on collector deformation, temperature, and stress distribution are investigated by means of the finite element method (FEM). Moreover, the paper analyzes the influence of heatsink thickness to maximize the stress evenness of the terminal PP IGBT and reduce the overall length of the stack system. ...
Today, power electronic reliability is a main subject of interest for many companies and laboratorie...
The reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory c...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...
The reliability of press-packed insulated gate bipolar transistors (IGBTs) depends on satisfactory c...
With the continuously increasing demand for energy and the limited supply of fossil fuels, renewable...
Press-pack Insulated Gate Bipolar Transistors (PP IGBT) are becoming increasingly used in HVDC and F...
In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insul...
In this study stresses and strains in a press-packed integrated gate bipolar transistor (IGBT) due t...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
This paper details a finite element modelling approach of the press pack assembly process for a diod...
This paper details a modeling and experimental assessment of the packaging process for a silicon car...
Thermal models are needed when designing power converters for Wind Turbines (WTs) in order to carry ...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
The reliability of press-packed IGBTs strongly depends on the solutions adopted in terms of heat dis...
This paper proposes a method for assessing the integrity of a series of insulated-gate bipolar trans...
Today, power electronic reliability is a main subject of interest for many companies and laboratorie...
The reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory c...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...
The reliability of press-packed insulated gate bipolar transistors (IGBTs) depends on satisfactory c...
With the continuously increasing demand for energy and the limited supply of fossil fuels, renewable...
Press-pack Insulated Gate Bipolar Transistors (PP IGBT) are becoming increasingly used in HVDC and F...
In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insul...
In this study stresses and strains in a press-packed integrated gate bipolar transistor (IGBT) due t...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
This paper details a finite element modelling approach of the press pack assembly process for a diod...
This paper details a modeling and experimental assessment of the packaging process for a silicon car...
Thermal models are needed when designing power converters for Wind Turbines (WTs) in order to carry ...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
The reliability of press-packed IGBTs strongly depends on the solutions adopted in terms of heat dis...
This paper proposes a method for assessing the integrity of a series of insulated-gate bipolar trans...
Today, power electronic reliability is a main subject of interest for many companies and laboratorie...
The reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory c...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...