This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sample containing two Al0.35Ga0.65As/GaAs, coupled double quantum wells (CDQWs), with inter-well barriers of different thicknesses, which have the heterointerfaces characterized by a distribution of bimodal roughness. The MPL measurements were performed at 4 K, with magnetic fields applied parallel to the growth direction, and varying from 0 to 12 T. The diamagnetic shift of the photoluminescence (PL) peaks is more sensitive to changes in the confinement potential, due to monolayer variations in the mini-well thickness, rather than to the exciton localization at the local potential fluctuations. As the magnetic field increases, the relative inte...
The photoluminescence (PL) technique as a function of temperature and excitation intensity was used ...
The photoluminescence (PL) technique as a function of temperature and excitation intensity was used ...
In this work we analyze the relation between the interface microroughness and the full width at half...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
We report on photoluminescence (PL) measurements of a symmetric GaAs/AlGaAs double quantum well (DQW...
We report on photoluminescence (PL) measurements of a symmetric GaAs/AlGaAs double quantum well (DQW...
We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high ...
We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high ...
In this work we analyze the relation between the interface microroughness and the full width at half...
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quan...
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quan...
The photoluminescence (PL) technique as a function of temperature and excitation intensity was used ...
The photoluminescence (PL) technique as a function of temperature and excitation intensity was used ...
In this work we analyze the relation between the interface microroughness and the full width at half...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
This work reports on the results of magnetophotoluminescence (MPL) measurements carried out in a sam...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
We report on photoluminescence (PL) measurements of a symmetric GaAs/AlGaAs double quantum well (DQW...
We report on photoluminescence (PL) measurements of a symmetric GaAs/AlGaAs double quantum well (DQW...
We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high ...
We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high ...
In this work we analyze the relation between the interface microroughness and the full width at half...
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quan...
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quan...
The photoluminescence (PL) technique as a function of temperature and excitation intensity was used ...
The photoluminescence (PL) technique as a function of temperature and excitation intensity was used ...
In this work we analyze the relation between the interface microroughness and the full width at half...