The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots

Maia, Álvaro Diego Bernardino
Silva, Euzi Conceicao Fernandes da
Quivy, Alain Andre
Bindilatti, Valdir
Aquino, Veríssimo Manoel de
Dias, Ivan Frederico Lupian

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Publication date

January 2012

DOI

10.1088/0022-3727/45/22/225104

Publisher

BRISTOL

ISSN

0022-3727

Journal

issn:0022-3727

Citation count (estimate)

Abstract

We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In gradient inside the QDs due to the strong In segregation and In-Ga intermixing present in the InxGa1-xAs/GaAs system. In order to perform the calculations, we used a continuum model for the strain, and the QDs and wetting layer were divided into their constituting monolayers, each one with a different In concentration, to be able to produce a specific composition profile. Our results clearly show that the introduction of such effects is very important if one desires to correctly reproduce or predict the optoelectronic propert...